A Self-Aligned Dry Etching Method for Mechanical Strain Enhancement of Germanium and Its Uniformity Improvement for Photonic Applications
Disclosed is a method of facilitating straining of a semiconductor element (331) for semiconductor fabrication. In a described embodiment, the method comprises: providing a base layer (320) with the semiconductor element (331) arranged on a first base portion (321) of the base layer (320), the semiconductor element (331) being subjected to a strain relating to a characteristic of the first base portion (321); and adjusting the characteristic of the first base portion (321) to facilitate straining of the semiconductor element (331).
Researchers
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method of facilitating straining of a semiconductor element for semiconductor fabrication, semiconductor platform obtained by the method, and optoelec
Taiwan | Pending -
method of facilitating straining of a semiconductor element for semiconductor fabrication, semiconductor platform obtained by the method, and optoelec
United States of America | Granted | 11,581,451
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